PMST2369,115 datasheet

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Маркировка

PMST2369,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMST2369,115 Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Continuous Collector Current: 200 mA Current - Collector (ic) (max): 200mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 40 Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 500MHz ID_COMPONENTS: 1949569 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 300 mA Maximum Operating Frequency: 500 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 300 mA Gain Bandwidth Product fT: 500 MHz DC Collector/Base Gain hfe Min: 40 DC Current Gain hFE Max: 40 at 10 mA at 1 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: PMST2369 T/R Other Names: 934030840115, PMST2369 T/R
Количество страниц

7 шт.
Формат

PDF
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Размер файла

64,51 KB